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TSC5302D

Taiwan Semiconductor
Part Number TSC5302D
Manufacturer Taiwan Semiconductor
Description High Voltage NPN Transistor
Published Feb 25, 2008
Detailed Description www.DataSheet4U.com Preliminary TSC5302D High Voltage NPN Transistor with Diode Pin assignment: 1. Base 2. Collector 3....
Datasheet PDF File TSC5302D PDF File

TSC5302D
TSC5302D

Overview
www.
DataSheet4U.
com Preliminary TSC5302D High Voltage NPN Transistor with Diode Pin assignment: 1.
Base 2.
Collector 3.
Emitter BVCEO = 400V BVCBO = 800V Ic = 2A VCE (SAT), = 1.
0V @ Ic / Ib = 1A / 0.
2A Features Built-in free-wheeling diode makes efficient anti saturation operation.
No need to interest an hfe value because of low variable storage-time spread even though comer spirit product.
Low base drive requirement.
Suitable for half bridge light ballast applications.
Ordering Information Part No.
TSC5302DCH TSC5302DCP Packing Tube T&R Package TO-251 TO-252 Block Diagram Structure Silicon triple diffused type.
NPN silicon transistor with Diode Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current DC Pulse Collector Power Dissipation (Tc=25 C) o Symbol VCBO VCEO VEBO IC Limit 800V 400V 10 2 4 Unit V V V A IB 1 2 A TO-251 TO-252 PD 75 1.
5 W Operating Junction Temperature Operating Junction and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Note: 1.
Single pulse, Pw = 300uS, Duty <= 2% TJ TSTG RΘjc RΘja +150 - 65 to +150 6.
25 100 o o o o C C C/W C/W TS5302D Preliminary 1-1 2004/09 rev.
A www.
DataSheet4U.
com Preliminary Electrical Characteristics Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage IC = 1mA, IB = 0 IC = 5mA, IE = 0 IE = 1mA, IC = 0 VCB = 500V, IE = 0 VEB = 9V, IC = 0 IC / IB = 0.
5A / 0.
1A IC / IB = 1.
0A / 0.
25A Base-Emitter Saturation Voltage IC / IB = 0.
5A / 0.
1A IC / IB = 1.
0A / 0.
25A DC Current Gain VCE = 5V, IC = 0.
4A VCE = 5V, IC = 1A Turn On Time Storage Time Fall Time Doide Fall Time Forward Voltage IC = 1A IC = 1A VCC = 250V, IC = 1A, IB1 = IB2 = 0.
2A, tp= 25uS Duty cycle < 1% BVCBO BVCEO BVEBO ICBO IE...


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