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TSC5305D

Taiwan Semiconductor
Part Number TSC5305D
Manufacturer Taiwan Semiconductor
Description High Voltage NPN Transistor
Published Feb 25, 2008
Detailed Description www.DataSheet4U.com Preliminary TSC5305D High Voltage NPN Transistor with Diode TO-263 Pin assignment: 1. Base 2. Coll...
Datasheet PDF File TSC5305D PDF File

TSC5305D
TSC5305D


Overview
www.
DataSheet4U.
com Preliminary TSC5305D High Voltage NPN Transistor with Diode TO-263 Pin assignment: 1.
Base 2.
Collector 3.
Emitter BVCEO = 400V BVCBO = 750V Ic = 5A VCE (SAT), = 1.
2V @ Ic / Ib = 4A / 1A Features Built-in free-wheeling diode makes efficient anti saturation operation.
No need to interest an hfe value because of low variable storage-time spread even though comer spirit product.
Low base drive requirement.
Suitable for half bridge light ballast applications.
Ordering Information Part No.
TSC5305DCZ TSC5305DCM Packing Tube T&R Package TO-220 TO-263 Block Diagram Structure Silicon triple diffused type.
NPN silicon transistor with Diode Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current DC Pulse Total Power Dissipation (Tc=25 C) Operating Junction Temperature Operating Junction and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Note: 1.
Single pulse, Pw = 300uS, Duty <= 2% o Symbol VCBO VCEO VEBO IC Limit 750V 400V 10 5 10 Unit V V V A IB 2 4 A PD TJ TSTG RΘjc RΘja 75 +150 - 65 to +150 1.
65 65 o o W o o C C C/W C/W TS5305D Preliminary 1-1 2004/09 rev.
B www.
DataSheet4U.
com Preliminary Electrical Characteristics Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage IC = 1mA, IB = 0 IC = 5mA, IE = 0 IE = 1mA, IC = 0 VCB = 500V, IE = 0 VEB = 9V, IC = 0 IC / IB = 1.
0A / 0.
2A IC / IB = 2.
0A / 0.
5A IC / IB = 4.
0A / 1.
0A Base-Emitter Saturation Voltage IC / IB = 1.
0A / 0.
2A IC / IB = 2.
0A / 0.
5A DC Current Gain VCE = 5V, IC = 0.
5A VCE = 5V, IC = 2A Turn On Time Storage Time Fall Time Doide Fall Time Forward Voltage IC = 3A IC = 3A VCC = 250V, IC = 2A, IB1 = IB2 = 0.
4A, tp= 25uS Duty cycle < 1% BVCBO BVCEO BVEBO ICBO IEB...


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