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C5200

Toshiba
Part Number C5200
Manufacturer Toshiba
Description Silicon NPN Transistor
Published Mar 5, 2008
Detailed Description 2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm • • • High br...
Datasheet PDF File C5200 PDF File

C5200
C5200

Overview
2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm • • • High breakdown voltage: VCEO = 230 V (min) Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 230 230 5 15 1.
5 150 150 −55 to 150 http://www.
DataSheet4U.
net/ Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-21F1A Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Test Condition VCB = 230 V, IE = 0 VEB = 5 V, IC = 0 IC = 50 mA, IB = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 7 A IC = 8 A, IB = 0.
8 A VCE = 5 V, IC = 7 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz Weight: 9.
75 g (typ.
) Min ― ― 230 55 35 ― ― ― ― Typ.
― ― ― ― 60 0.
4 1.
0 30 200 Max 5.
0 5.
0 ― 160 ― 3.
0 1.
5 ― ― V V MHz pF Unit µA µA V Note: hFE (1) classification R: 55 to 110, O: 80 to 160 1 2004-07-07 datasheet pdf - http://www.
DataSheet4U.
net/ 2SC5200 Marking Part No.
(or abbreviation code) TOSHIBA 2SC5200 Lot No.
JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish.
http://www.
DataSheet4U.
net/ 2 2004-07-07 datasheet pdf - http://www.
DataSheet4U.
net/ 2SC5200 IC – VCE 20 Common emitter Tc = 25°C 20 Common emitter VCE = 5 V IC – VBE IC (A) 600 400 12 300 250 200 150 100 IB = 10 mA 50 40 30 IC (A) Collector current 16 800 16 12 Collector current 8 8 Tc = 100°C 4 4 25 −25 0 0 20 0 0 2 4 6 8 10 0.
4 0.
8 1.
2 1.
6 2.
0 Collector-emitter volta...


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