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C5206

Hitachi
Part Number C5206
Manufacturer Hitachi
Description Silicon NPN Transistor
Published Sep 6, 2015
Detailed Description 2SC5206 Silicon NPN Triple Diffused Application High power switching Features • High breakdown voltage VCBO = 500 V • I...
Datasheet PDF File C5206 PDF File

C5206
C5206

Overview
2SC5206 Silicon NPN Triple Diffused Application High power switching Features • High breakdown voltage VCBO = 500 V • Isolated package TO-220FM Outline TO-220FM 123 1.
Base 2.
Collector 3.
Emitter 2SC5206 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Collector power dissipation Junction temperature Storage temperature Note: 1.
Value at TC = 25°C Symbol VCBO VCEO VEBO IC IC(peak) PC PC*1 Tj Tstg Ratings 500 400 7 5 10 1.
8 25 150 –55 to +150 Unit V V V A A W W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Collector to base breakdown V(BR)CBO voltage 500 Collector to emitter breakdown V(BR)CEO voltage 400 Emitter to base breakdown voltage V(BR)EBO 7 Collector cutoff current Collector cutoff current DC current transfer ratio DC current transfer ratio Collector to emitter saturation voltage ICBO ICEO hFE hFE VCE(sat) — — 20 18 — Base to emitter saturation voltage VBE(sat) — Turn on time ton — Typ — — — — — — — — — 0.
5 Storage time tstg — 2.
0 Fall time tf — 0.
6 Max — Unit V Test conditions IC = 100 µA, IE = 0 —V IC = 10 mA, RBE = ∞ —V IE = 10 mA, IC = 0 100 µA 100 µA — — 1.
0 V VCB = 400 V, IE = 0 VCE = 350 V, RBE = 0 VCE = 5 V, IC = 2.
5 A VCE = 5 V, IC = 1 mA IC = 2.
5 A, IB = 0.
5 A 1.
5 V IC = 2.
5 A, IB = 0.
5 A — µsec IC = 5 A, VCC = 150 V, IB1 = –IB2 = 1 A — µsec IC = 5 A, VCC = 150 V, IB1 = –IB2 = 1 A — µsec IC = 5 A, VCC = 150 V, IB1 = –IB2 = 1 A 2 Collector Power Dissipation Pc (W) Collector Current I C (A) Maximum Collector Power Dissipation Curve 40 30 20 10 2550µ2sµ5s01µmss= PW 0 50 100 150 200 Case Temperature Tc (°C) Area of Safe Operation 10 ic (peak) Ic (max) 1 0.
1 1D0CTmcOs=pe2r5as°Cion 0.
01 Ta = 25 °C 1 shot pulse 0.
001 1 3 10 30 100 Collector to Emitter Voltage 300 1000 V CE (V) Collector to Emitter Voltage vs.
Base to Emitter Resistance 600 I C = 1...


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