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K2370

NEC
Part Number K2370
Manufacturer NEC
Description 2SK2370
Published Apr 11, 2008
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2369/2SK2370 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ...
Datasheet PDF File K2370 PDF File

K2370
K2370

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2369/2SK2370 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.
PACKAGE DIMENSIONS (in millimeters) φ 3.
0 ± 0.
2 1.
0 15.
7 MAX 4 4.
7 MAX.
1.
5 FEATURES • Low On-Resistance 2SK2370: RDS(on) = 0.
4 Ω (VGS = 10 V, ID = 10 A) 20.
0 ± 0.
2 • Low Ciss Ciss = 2400 pF TYP.
• High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage(2SAK2369/2370) VDSS Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 450/500 ± 30 ± 20 ± 80 140 3.
0 150 20 285 V V A A W W ˚C A mJ 1 2 3 19 MIN.
3.
0 ± 0.
2 2.
2 ± 0.
2 5.
45 1.
0 ± 0.
2 5.
45 4.
5 ± 0.
2 6.
0 0.
6 ± 0.
1 1.
Gate 2.
Drain 3.
Source 4.
Fin (Drain) –55 to +150 ˚C MP-88 Drain ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 Body Diode Gate Source Document No.
TC-2507 (O.
D.
No.
TC-8066) Date Published January 1995 P Printed in Japan © 7.
0 2.
8 ± 0.
1 2SK2369: RDS(on) = 0.
35 Ω (VGS = 10 V, ID = 10 A) www.
DataSheet4U.
com 1995 2SK2369/2SK2370 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source On-State Resistance SYMBOL RDS(on) MIN.
TYP.
0.
30 0.
32 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time www.
DataSheet4U.
com Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 2400 500 45 35 60 105 65 65 15 30 1.
0...


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