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2N6730


Part Number 2N6730
Manufacturer Central Semiconductor
Title (2N6716 - 2N6730) Silicon Power Transistors
Description 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.DataSheet4U.com ...
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2N6730 : PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt 2N6728 2N6729 2N6730 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb= 25°C SYMBOL 2N6728 VCBO VCEO VEBO ICM IC Ptot -60 -60 2N6729 -80 -80 -5 -2 -1 1 E-Line TO92 Compatible 2N6730 -100 -100 UNIT V V V A A W °C Operating and Storage Temperature Range Tj:Tstg -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL 2N6728 2N6729 2N6730 UNIT CONDITIONS. MIN. MAX MIN. MAX MIN. MAX Co.

2N6730 : The 2N6728 and 2N6730 are silicon NPN power transistors in a TO−237 type package designed for general purpose power amplifier and switching applications. Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Base 2N6728 Voltage, .. V. .C.B.O. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V 2N6730 . . 100V Collector−Emitter 2N6728 . . Voltage, .. V. .C.E.O. . . . . . . . . . . . . . ..

2N6731 : NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 – MARCH 94 FEATURES * 80 Volt VCEO * Gain of 100 at IC = 350 mA * Ptot=1 Watt 2N6731 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE 100 80 5 2 1 1 -55 to +200 UNIT V V V A A W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Co.

2N6731 : Continental Device India Pvt. Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANNAR MEDIUM POWER TRANSISTOR 1. EMITTER 2. BASE 3. COLLECTOR 2N6731 TO-92 Plastic Package MAXIMUM RATINGS (Ta=25ºC, unless otherwise specified) PARAMETERS SYMBOL VALUE Collector-Base Voltage VCBO 100 Collector-Emitter Voltage VCEO 80 Emitter-Base Voltage VEBO 5 Peak Pulse Current ICM 2 Continuous Collector Current IC 1 Power Dissipation at Tamb=25ºC Ptot 1 Operating and Storage Temperature Range Tj;Tstg -55 to 200 UNIT V V V A A W ºC ELECTRICAL CHARACTERISTICS (Ta=25ºC) PARAMETER SYMBOL TEST CONDITION Collector-Base Breakdown Voltage Collector-Emitter B.

2N6732 : PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 – MARCH 94 FEATURES * 80 Volt VCEO * Gain of 100 at IC = 350 mA * Ptot=1 Watt 2N6732 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE -100 -80 -5 -2 -1 1 -55 to +200 UNIT V V V A A W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Curre.

2N6732 : 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

2N6738 : ·With TO-220 package ·High voltage ratings ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Suited for 115 and 220V switchmode applications such as switching regulators, Inverters and DC-DC converters PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6738 VCBO Collector-base voltage 2N6739 2N6740 2N6738 VCEO Collector-emitter voltage 2N6739 2N6740 VEBO Emitter-base voltage IC Collector current ICM Collector current-peak IB Base current PT Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THER.

2N6738 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed , power switc- hing in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulators, inverters, DC-DC and converter. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage-VBE= -1.5V 450 V VCEX Collector-Emitter Voltage-VBE= -1.5V 350 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Conti.

2N6739 : ·With TO-220 package ·High voltage ratings ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Suited for 115 and 220V switchmode applications such as switching regulators, Inverters and DC-DC converters PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6738 VCBO Collector-base voltage 2N6739 2N6740 2N6738 VCEO Collector-emitter voltage 2N6739 2N6740 VEBO Emitter-base voltage IC Collector current ICM Collector current-peak IB Base current PT Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THER.

2N6739 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed , power switc- hing in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulators, inverters, DC-DC and converter. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage-VBE= -1.5V 550 V VCEX Collector-Emitter Voltage-VBE= -1.5V 400 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Conti.




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