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APT35GP120B2DF2

Advanced Power Technology
Part Number APT35GP120B2DF2
Manufacturer Advanced Power Technology
Description Power MOS 7 IGBT
Published May 7, 2008
Detailed Description APT35GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBT...
Datasheet PDF File APT35GP120B2DF2 PDF File

APT35GP120B2DF2
APT35GP120B2DF2

Overview
APT35GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
G C • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff www.
DataSheet4U.
com MAXIMUM RATINGS Symbol VCES VGE VGEM I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient • 100 kHz operation @ 800V, 14A • 50 kHz operation @ 800V, 25A • RBSOA rated E C G E All Ratings: TC = 25°C unless otherwise specifie...


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