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WFF730

Wisdom technologies
Part Number WFF730
Manufacturer Wisdom technologies
Description N-Channel MOSFET
Published Jun 24, 2008
Detailed Description Wisdom Semiconductor WFF730 N-Channel MOSFET Features ■ ■ RDS(on) (Max 0.95 Ω )@VGS=10V Symbol ◀ { 2. Drain Gate ...
Datasheet PDF File WFF730 PDF File

WFF730
WFF730

Overview
Wisdom Semiconductor WFF730 N-Channel MOSFET Features ■ ■ RDS(on) (Max 0.
95 Ω )@VGS=10V Symbol ◀ { 2.
Drain Gate Charge (Typical 25nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested www.
DataSheet4U.
com ■ Maximum Junction Temperature Range (150°C) ● 1.
Gate { ▲ ● ● { 3.
Source General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control.
TO-220F 1 2 3 Absolute Maximum Ratings (* Drain current limited by junction temperature) Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 400 6.
0* 3.
6* 24* Units V A A A V mJ mJ V/ns W W/°C °C °C ±30 390 8.
75 5.
5 38 0.
3 - 55 ~ 150 300 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Value Min.
- Typ.
- Max.
3.
31 62.
5 Units °C/W °C/W Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF GSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID ...


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