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MTW32N20E

Motorola
Part Number MTW32N20E
Manufacturer Motorola
Description TMOS POWER FET
Published Jun 27, 2008
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW32N20E/D Designer's TMOS E-FET .™ Power Field Effect...
Datasheet PDF File MTW32N20E PDF File

MTW32N20E
MTW32N20E

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW32N20E/D Designer's TMOS E-FET .
™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits www.
DataSheet4U.
com where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Isolated Mounting Hole ™ Data Sheet MTW32N20E Motorola Preferred Device TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.
075 OHM ® D G S CASE 340K–01, Style 1 TO–247AE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.
0 MΩ) Gate–Source Voltage — Continuous Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vpk, IL = 32 Apk, L = 1.
58 mH, RG = 25 Ω ) Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS ID ID IDM PD TJ, Tstg EAS RθJC RθJA TL Value 200 200 ± 20 32 19 128 180 1.
44 – 55 to 150 810 0.
7 40 260 Unit Vdc Vdc Vdc Adc Apk Watts W/°C °C mJ °C/W °C Designer’s Data for “Worst Case” Conditions — The Designer’s D...


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