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MTW32N20E

ON Semiconductor
Part Number MTW32N20E
Manufacturer ON Semiconductor
Description Power MOSFET
Published Jan 28, 2016
Detailed Description MTW32N20E Power MOSFET 32 Amps, 200 Volts N−Channel TO−247 This advanced Power MOSFET is designed to withstand high ene...
Datasheet PDF File MTW32N20E PDF File

MTW32N20E
MTW32N20E

Overview
MTW32N20E Power MOSFET 32 Amps, 200 Volts N−Channel TO−247 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain−to−source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Features • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Isolated Mounting Hole • This is a Pb−Free Device* MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage Drain−Gate Voltage (RGS = 1.
0 MW) Gate−Source Voltage − Continuous Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 ms) Total Power Dissipation Derate above 25°C VDSS VDGR VGS ID ID IDM PD 200 Vdc 200 Vdc ± 20 Vdc 32 Adc 19 128 Apk 180 W 1.
44 W/°C Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vpk, IL = 32 Apk, L = 1.
58 mH, RG = 25 W ) EAS 810 mJ Thermal Resistance − Junction−to−Case − Junction−to−Ambient RRqqJJCA 0.
7 °C/W 40 Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering d...


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