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LMBT3946DW1T3G

Leshan Radio Company
Part Number LMBT3946DW1T3G
Manufacturer Leshan Radio Company
Description Dual Transistor
Published Oct 12, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3904DW1T1G device is a spin–off of our popular SOT–...
Datasheet PDF File LMBT3946DW1T3G PDF File

LMBT3946DW1T3G
LMBT3946DW1T3G

Overview
LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors The LMBT3904DW1T1G device is a spin–off of our popular SOT–23/SOT–323 three–leaded device.
It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package.
By putting two discrete devices in one package , this device is ideal for low–power surface mount applications where board space is at a premium.
LMBT3904DW1T1G S-LMBT3904DW1T1G ●FEATURES 1)Low VCE(sat), ≤ 0.
4 V 2)Simplifies Circuit Design 3)Reduces Board Space 4)Reduces Component Count 5)Available in 8 mm, 7–inch/3,000 Unit Tape and Reel 6)hFE, 100–300 7)We declare that the material of product compliant with RoHS requirements and Halogen Free.
8) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
SC-88 ●DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT3904DW1T1G MA 3000/Tape&Reel LMBT3946DW1T3G MA 10000/Tape&Reel ●MAXIMUM RATINGS(Ta = 25℃) Parameter Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Limits 40 60 6.
0 200 Unit Vdc Vdc Vdc mAdc ●THERMAL CHARACTERISTICS Total Device Dissipation, FR−5 Board (Note 1) @ TA = 25°C Thermal Resistance, Junction–to–Ambient(Note 1) Junction and Storage temperature PD 150 RΘJA TJ,Tstg 833 −55∼+150 mW ℃/W ℃ 1.
Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
June,2015 Rev.
B 1/6 LESHAN RADIO COMPANY, LTD.
LMBT3904DW1T1G，S-LMBT3904DW1T1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) OFF CHARACTERISTICS Characteristic Symbol Collector–Emitter Breakdown Voltage VBR(CEO) (IC = 1.
0 mAdc, I B = 0) Collector–Base Breakdown Voltage VBR(CBO) (I C = 10 μAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = 10 μAdc, I C = 0) VBR(EBO) Collector Cutoff Current ICEX ( V CE = 30 Vdc, V EB = 3.
0Vdc) Base Cutoff Current ...


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