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SKB02N60

Infineon Technologies
Part Number SKB02N60
Manufacturer Infineon Technologies
Description Fast IGBT
Published Jul 22, 2008
Detailed Description SKP02N60 SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compar...
Datasheet PDF File SKB02N60 PDF File

SKB02N60
SKB02N60


Overview
SKP02N60 SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: www.
DataSheet4U.
com- very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Very soft, fast recovery anti-parallel EmCon diode C G E P-TO-220-3-1 (TO-220AB) P-TO-263-3-2 (D²-PAK) (TO-263AB) • Complete product spectrum and PSpice Models : http://www.
infineon.
com/igbt/ Type SKP02N60 SKB02N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Tj , Tstg -55.
.
.
+150 °C 1) VCE 600V IC 2A VCE(sat) 2.
2V Tj 150°C Package TO-220AB TO-263AB Ordering Code Q67040-S4214 Q67040-S4215 Symbol VCE IC Value 600 6.
0 2.
9 Unit V A ICpul s IF 12 12 6.
0 2.
9 IFpul s VGE tSC Ptot 12 ±20 10 30 V µs W VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1 Jul-02 SKP02N60 SKB02N60 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal www.
DataSheet4U.
com resistance, 1) Symbol Conditions Max.
Value Unit RthJC RthJCD RthJA RthJA TO-220AB TO-263AB 4.
2 7 62 40 K/W junction – ambient SMD version, device on PCB Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A VCE(...


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