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HY27US08121M

Hynix Semiconductor
Part Number HY27US08121M
Manufacturer Hynix Semiconductor
Description (HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Published Jul 31, 2008
Detailed Description HY27SS(08/16)121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx...
Datasheet PDF File HY27US08121M PDF File

HY27US08121M
HY27US08121M

Overview
HY27SS(08/16)121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History No.
www.
DataShe et4U.
com 0.
0 0.
1 0.
2 0.
3 Initial Draft Renewal Product Group Make a decision of PKG information Append 1.
8V Operation Product to Data sheet 1) Add Errata tWC Specification 0.
4 Relaxed value 50 60 tWH 15 20 tWP 25 40 tRC 50 60 tREH 15 20 tRP 30 40 tREA@ID Read 35 45 Mar.
28.
2004 Preliminary History Draft Date Sep.
17.
2003 Oct.
07.
2003 Nov.
08.
2003 Dec.
01.
2003 Remark Preliminary Preliminary Preliminary Preliminary 2) Modify the description of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled (Enabled) (Page22) 3) Add the description of System Interface Using CE don’t care (Page37) 1) Delete Errata 2) Change Characteristics (3V Product) 0.
5 tCRY Before After 60 + tr 70 + tr tREA@ID Read 35 45 Jun.
01.
2004 Preliminary 3) Delete Cache Program 0.
6 1) Change TSOP1, WSOP1, FBGA package dimension 2) Edit TSOP1, WSOP1 package figures 3) Change FBGA package figure Oct.
20.
2004 This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 0.
6 / Oct.
2004 1 HY27SS(08/16)121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash FEATURES SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width.
- Multiplexed Address/ Data www.
DataSheet4U.
com - Pinout compatibility for all densities STATUS REGISTER ELECTRONIC SIGNATURE SUPPLY VOLTAGE Sequential Row Read OPTION : HY27USXX121M - 3.
3V device: VCC = 2.
7 to 3.
6V - 1.
8V device: VCC = 1.
7 to 1.
95V : HY27SSXX121M AUTOMATIC PAGE 0 READ AT POWER-UP OPTION - Boot from NAND support - Automatic Memory Download Memory Cell Array - 528Mbi...


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