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HY27US08121A

Hynix Semiconductor
Part Number HY27US08121A
Manufacturer Hynix Semiconductor
Description 512Mbit (64M x 8bit / 32M x 16bit) NAND Flash Memory
Published Mar 15, 2016
Detailed Description HY27US(08/16)121A Series HY27SS(08/16)121A Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx...
Datasheet PDF File HY27US08121A PDF File

HY27US08121A
HY27US08121A

Overview
HY27US(08/16)121A Series HY27SS(08/16)121A Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History Revision No.
0.
0 0.
1 0.
2 History Draft Date Remark Initial Draft.
Sep.
2004 Preliminary 1) Correct part number ( change mode) - 2A -> 1A (sequential row read : disable -> enable) 2) Correct Table.
5 & Table 12 - Correct Command Set - correct AC timing characteristics (tWP : 40 -> 25ns, tWH : 20 ->15ns) 3) Correct Summary description & page.
7 - The cache feature is deleted in summary description.
- Note.
3 is deleted.
(page.
7) 4) Add System interface using CE don’t care (page.
38) 5) Change TSOP1, WSOP1,FBGA package dimension & figures.
Oct.
22.
2004 Preliminary - Change TSOP1, WSOP1, FBGA package mechanical data - Change TSOP1, WSOP package figures 6) Correct TSOP1, WSOP1 Pin configuration - 38th NC pin has been changed Lockpre (figure 2,3) 7) Add Bad block Management 1) LOCKPRE is changed to PRE - Texts, Table and figures are changed.
2) Change Command set - Read A,B are changed to Read1.
- Read C is changed to Read2.
3) Change AC, DC characterics - tRB, tCRY, tCEH and tOH are added.
4) Correct Program time (max) - before : 700us - after : 500us 5) Edit figures - Address names are changed.
6) Change FBGA Package Dimension - FD1 : 1.
70(before) -> 0.
90(after) Mar.
08.
2005 Preliminary Rev 1.
1 / Fev.
2006 1 HY27US(08/16)121A Series HY27SS(08/16)121A Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Revision History Revision No.
History 1) Change AC Characteristics (1.
8V device) tRC tRP tREH tWC tWP tWH tREA before 50 25 15 50 25 15 30 after 60 40 20 60 40 20 40 - Continued Draft Date Remark 2) Change AC Parameter 0.
3 tCRY(3.
3V) Before 50+tr(R/B#) After 60+tr(R/B#) 3) Change Figure 20,22 4) Add Read ID Table 5) Change PAD Configuration - GND is changed to VSS.
6) Add Marking Information tCRY(1.
8V) 50+tr(R/B#) 80+tr(R/B#) tOH 15 10 1) The test condition for ICC1 opera...


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