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SI6969DQ

Vishay Siliconix
Part Number SI6969DQ
Manufacturer Vishay Siliconix
Description Dual P-Channel 1.8-V (G-S) MOSFET
Published Aug 5, 2008
Detailed Description Si6969DQ Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) 0.034 @ VGS = - 4...
Datasheet PDF File SI6969DQ PDF File

SI6969DQ
SI6969DQ

Overview
Si6969DQ Vishay Siliconix Dual P-Channel 1.
8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) 0.
034 @ VGS = - 4.
5 V 0.
050 @ VGS = - 2.
5 V 0.
075 @ VGS = - 1.
8 V ID (A) "4.
6 "3.
8 "3.
0 S1 S2 www.
DataSheet4U.
com D1 S1 S1 G1 1 2 3 4 D TSSOP-8 8 D2 7 S2 6 S2 5 G2 Top View D1 D2 G1 G2 Si6969DQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit - 12 "8 "4.
6 "3.
8 "30 - 1.
25 1.
1 0.
72 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Notes a.
Surface Mounted on FR4 Board.
b.
t v 10 sec.
Document Number: 70828 S-59527—Rev.
A, 19-Oct-98 www.
vishay.
com t v 10 sec Steady State RthJA 115 Sy...


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