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SII150N06

Sirectifier Semiconductors
Part Number SII150N06
Manufacturer Sirectifier Semiconductors
Description NPT IGBT Modules
Published Aug 26, 2008
Detailed Description SII150N06 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") www.DataSheet4U.com TC = 25oC, unless otherwise specified C...
Datasheet PDF File SII150N06 PDF File

SII150N06
SII150N06

Overview
SII150N06 NPT IGBT Modules Dimensions in mm (1mm = 0.
0394") www.
DataSheet4U.
com TC = 25oC, unless otherwise specified Conditions Values 600 180(150) 300 595 _ +20 150 300 2.
3 2500 Absolute Maximum Ratings Symbol Units V A A W V A A As V 2 IGBT Wechselrichter/ IGBT Inverter VCES IC TC= 25(60)oC ICRM TC= 60oC, tP =1ms Ptot TC= 25oC, Tvj= 150oC VGES Diode Wechselrichter/ Diode Inverter IF IFRM 2 tP =1ms VR=0V, tP =10ms; TVj=125oC It Module Isolation/ Module Isolation VISOL RMS, f=50Hz, t=1min, NTC connect to Baseplate Sirectifier R SII150N06 NPT IGBT Modules Characteristics Symbol Conditions IGBT Wechselrichter/ IGBT Inverter VGEth VGE = VCE, IC = 3.
0mA ICES VGE = 0; VCE = 600V, Tj = 25(125)oC IGES VCE = 0; VGE=20V VCE(sat) Cies Cres IC =150A; VGE = 15V; Tj = 25(125)oC under following conditions VGE = 0, VCE = 25V, f = 1MHz TC = 25oC, unless otherwise specified min.
4.
5 typ.
5.
5 1(1000) max.
6.
5 500 400 Units V uA nA V nF nH A 1.
95(2.
2) 2.
45(-) 6.
5 0.
6 40 675 LCE o www.
DataShee...


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