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SII150N12

Sirectifier Semiconductors
Part Number SII150N12
Manufacturer Sirectifier Semiconductors
Description NPT IGBT Modules
Published Aug 26, 2008
Detailed Description SII150N12 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") www.DataSheet4U.com Absolute Maximum Ratings Symbol VCES IC...
Datasheet PDF File SII150N12 PDF File

SII150N12
SII150N12

Overview
SII150N12 NPT IGBT Modules Dimensions in mm (1mm = 0.
0394") www.
DataSheet4U.
com Absolute Maximum Ratings Symbol VCES IC ICRM VGES Ptot TVj,(Tstg) Visol RthJC RthJCD o TC = 25oC, unless otherwise specified Conditions Values 1200 210(150) 420(300) _ +20 1250 _ 40.
.
.
+125(150) 2500 _ < 0.
1 o Units V A A V W C TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min V K/W _ 0.
25 < Sirectifier R SII150N12 NPT IGBT Modules Electeical Characteristics Symbol Conditions Static Characteristics VGE(th) VGE = VCE, IC =6mA ICES VGE = 0; VCE = 1200V; Tj = 25(125)oC IGES VGE = 20V, VCE = 0 VCE(sat) IC =150A; VGE = 15V; Tj = 25(125)oC; chip level AC Characteristics Cies under following conditions Coes VGE = 0, VCE = 25V, f = 1MHz Cres www.
DataSheet4U.
com gfs VCE=20V, IC=150A Switching Characteristics td(on) VCC = 600V, IC = 150A tr RGon = RGoff =5.
6 , Tj = 125oC td(off) VGE = ± 15V tf FWD under following conditions: VF IF = 150A, VGE = 0V, Tj = 25(125)oC trr IF=150A, VR= _600V,VGE=0V,d...


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