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P4C163L

Pyramid Semiconductor Corporation
Part Number P4C163L
Manufacturer Pyramid Semiconductor Corporation
Description ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS
Published Aug 30, 2008
Detailed Description P4C163/P4C163L ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle T...
Datasheet PDF File P4C163L PDF File

P4C163L
P4C163L

Overview
P4C163/P4C163L ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 25/35ns (Commercial) – 25/35/45ns (Military) Low Power Operation (Commercial/Military) www.
DataSheet4U.
com Output Enable and Dual Chip Enable Control Functions Single 5V±10% Power Supply Data Retention with 2.
0V Supply, 10 µA Typical Current (P4C163L Military) Common I/O Fully TTL Compatible Inputs and Outputs Standard Pinout (JEDEC Approved) – 28-Pin 300 mil DIP, SOJ – 28-Pin 350 x 550 mil LCC – 28-Pin CERPACK DESCRIPTION The P4C163 and P4C163L are 73,728-bit ultra high-speed static RAMs organized as 8K x 9.
The CMOS memories require no clocks or refreshing and have equal access and cycle times.
Inputs are fully TTL-compatible.
The RAMs operate from a single 5V±10% tolerance power supply.
With battery backup, data integrity is maintained for supply voltages down to 2.
0V.
Current drain is 10 µA from a 2.
0V supply.
Access times as fast as 25 nanoseconds are available, permitting greatly enhanced system operating speeds.
CMOS is used to reduce power consumption in both active and standby modes.
The P4C163 and P4C163L are available in 28-pin 300 mil DIP and SOJ, 28-pin 350 x 550 mil LCC, and 28-pin CERPACK packages providing excellent board level densities.
FUNCTIONAL BLOCK DIAGRAM PIN CONFIGURATIONS DIP (P5, C5), SOJ (J5) CERPACK (F4) SIMILAR LCC (L5) Document # SRAM120 REV C 1 Revised August 2006 P4C163/163L MAXIMUM RATINGS(1) Symbol VCC VTERM TA Parameter Power Supply Pin with Respect to GND Terminal Voltage with Respect to GND (up to 7.
0V) Operating Temperature Value –0.
5 to +7 –0.
5 to VCC +0.
5 –55 to +125 Unit V Symbol TBIAS TSTG PT IOUT Parameter Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Value –55 to +125 –65 to +150 1.
0 50 Unit °C °C W mA V °C RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE Grade(2) Military www.
DataSheet4U.
com Ambient Temperature –55 to +125°C GND 0V VCC 5.
0V ± 10% ...


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