DatasheetsPDF.com

P4C167L

Part Number	P4C167L
Manufacturer	Pyramid Semiconductor Corporation
Description	ULTRA HIGH SPEED 16K X 1 STATIC CMOS RAMS
Published	Aug 30, 2008
Detailed Description	P4C167/P4C167L ULTRA HIGH SPEED 16K X 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle ...
Datasheet	P4C167L PDF File

Overview

P4C167/P4C167L ULTRA HIGH SPEED 16K X 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military) www.
DataSheet4U.
com Separate Data I/O Three-State Output TTL Compatible Output Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved) – 20-Pin 300 mil DIP – 20-Pin 300 mil SOJ – 20-Pin LCC Low Power Operation Single 5V±10% Power Supply Data Retention with 2.
0V Supply (P4C167L Military) DESCRIPTION The P4C167/L are 16,384-bit high speed static RAMs organized as 16K x 1.
The CMOS memories require no clocks or refreshing and have equal access and cycle times.
The RAMs operate from a single 5V ± 10% tolerance power supply.
Data integrity is maintained for supply voltages down to 2.
0V, typically drawing 10µA.
Access times as fast as 10 nanoseconds are available, greatly enhancing system speeds.
CMOS reduces power consumption to low levels.
The P4C167/L are available in 20-pin 300 mil DIP, 20-pin 300 mil SOJ, and 20-pin LCC packages providing excellent board level densities.
FUNCTIONAL BLOCK DIAGRAM PIN CONFIGURATIONS DIP (P2, C6) SOJ (J2) SIMILAR LCC (L9) Document # SRAM106 REV A 1 Revised October 2005 P4C167 MAXIMUM RATINGS(1) Symbol VCC Parameter Power Supply Pin with Respect to GND Terminal Voltage with Respect to GND (up to 7.
0V) Operating Temperature Value –0.
5 to +7 –0.
5 to VCC +0.
5 –55 to +125 Unit V Symbol TBIAS TSTG PT IOUT Parameter Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Value –55 to +125 –65 to +150 1.
0 50 Unit °C °C W mA VTERM TA V °C RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE Grade(2) www.
DataSheet4U.
com CAPACITANCES(4) VCC = 5.
0V, TA = 25°C, f = 1.
0MHz Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions Typ.
Unit VIN = 0V VOUT = 0V 5 7 pF pF Ambient Temperature GND 0V 0V 0V VCC 5.
0V ± 10% 5.
0V ± 10% 5.
0V ± 10% Military –55°C to +125°C –40°C t...

Similar Datasheet

P4C163 ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS - Pyramid Semiconductor Corporation
P4C163L ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS - Pyramid Semiconductor Corporation
P4C164 Ultra High Speed 8K x 8 Static CMOS RAMS - Performance Semiconductor
P4C164 Ultra High Speed 8K x 8 Static CMOS RAMS - Pyramid Semiconductor
P4C164LL STATIC CMOS RAM - PYRAMID
P4C165 ULTRA HIGH SPEED 8K x 8 RESETTABLE STATIC CMOS RAM - Pyramid Semiconductor Corporation
P4C167 ULTRA HIGH SPEED 16K X 1 STATIC CMOS RAMS - Pyramid Semiconductor Corporation
P4C167L ULTRA HIGH SPEED 16K X 1 STATIC CMOS RAMS - Pyramid Semiconductor Corporation
P4C168 (P4C168 - P4C170) ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS - Pyramid Semiconductor Corporation
P4C1681 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS - ETC

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)