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STP5NK65Z

STMicroelectronics
Part Number STP5NK65Z
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Sep 21, 2008
Detailed Description N-CHANNEL 650V - 1.5Ω - 5A TO-220 Zener-Protected SuperMESH™Power MOSFET TYPE STP5NK65Z s STP5NK65Z VDSS 650 V RDS(on...
Datasheet PDF File STP5NK65Z PDF File

STP5NK65Z
STP5NK65Z

Overview
N-CHANNEL 650V - 1.
5Ω - 5A TO-220 Zener-Protected SuperMESH™Power MOSFET TYPE STP5NK65Z s STP5NK65Z VDSS 650 V RDS(on) < 1.
8 Ω ID 5A Pw 85 W TYPICAL RDS(on) = 1.
5 Ω s EXTREMELY HIGH dv/dt CAPABILITY s IMPROVED ESD CAPABILITY s 100% AVALANCHE RATED s GATE CHARGE MINIMIZED www.
DataSheet4U.
com s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING REPEATIBILITY TO-220 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ORDERING INFORMATION SALES TYPE STP5NK65Z MARKING P5NK65Z PACKAGE TO-220 PACKAGING TUBE April 2002 1/9 STP5NK65Z ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (l) PTOT VESD(G-S) dv/dt (1) Tj www.
DataSheet4U.
com Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.
5KΩ) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature Value 650 650 ± 30 5 3.
1 20 85 0.
6 2000 4.
5 -55 to 150 -55 to 150 Unit V V V A A A W W/°C V V/ns °C °C (l) Pulse width limited by safe operating area (1) I SD ≤ 5A, di/dt ≤100 µ A, VDD ≤ V(BR)DSS, T j ≤ TJMAX.
(*) Limited only by maximum temperature allowed THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.
64 50 300 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter ...


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