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STP5NK65ZFP

ST Microelectronics
Part Number STP5NK65ZFP
Manufacturer ST Microelectronics
Description Power MOSFETs
Published May 31, 2009
Detailed Description STP5NK65ZFP www.datasheet4u.com N-channel 650 V, 1.5 Ω, 4.5 A TO-220FP Zener-protected SuperMESH™ Power MOSFET Feature...
Datasheet PDF File STP5NK65ZFP PDF File

STP5NK65ZFP
STP5NK65ZFP

Overview
STP5NK65ZFP www.
datasheet4u.
com N-channel 650 V, 1.
5 Ω, 4.
5 A TO-220FP Zener-protected SuperMESH™ Power MOSFET Features Type STP5NK65ZFP ■ ■ ■ ■ ■ ■ VDSS 650 V RDS(on) max < 1.
8 Ω ID 4.
5 A Pw 25 W 100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Improved ESD capability 1 2 3 TO-220FP Applications ■ Switching application Figure 1.
Internal schematic diagram Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products Table 1.
Device summary Marking P5NK65ZFP Package TO-220FP Packaging Tube Order codes STP5NK65ZFP April 2009 Doc ID 15565 Rev 1 1/12 www.
st.
com 12 Electrical ratings STP5NK65ZFP 1 www.
datasheet4u.
com Electrical ratings Table 2.
Symbol VDS VGS ID ID IDM (2) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Value 650 ± 30 4.
5 (1) Unit V V A A A W W/°C V V/ns V 3.
1 (1) 18 (1) PTOT 25 0.
6 2000 4.
5 2500 VESD(G-S) dv/dt (3) VISO Tj Tstg Gate source ESD (HBM-C=100 pF, R=1.
5 kΩ) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Operating junction temperature Storage temperature -55 to 150 V 1.
Limited only by maximum temperature allowed 2.
Pulse width limited by safe operating area 3.
ISD ≤ 5.
7 A, di/dt ≤ 200 A/µs, VDD =80% V(BR)DSS.
Table 3.
Symbol Rthj-case Rthj-amb Tl Absolute maximum ratings Parameter Thermal resistance junction-case...


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