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BB506M

Part Number	BB506M
Manufacturer	Renesas Technology
Description	Built in Biasing Circuit MOS FET IC UHF RF Amplifier
Published	Nov 19, 2008
Detailed Description	BB506M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G1604-0100 Rev.1.00 Nov 26, 2007 Features • Built in B...
Datasheet	BB506M PDF File

Overview

BB506M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G1604-0100 Rev.
1.
00 Nov 26, 2007 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain www.
DataSheet4U.
com PG = 24 dB typ.
(f = 900 MHz) • Low noise NF = 1.
4 dB typ.
(f = 900 MHz) • Low output capacitance Coss = 1.
1 pF typ.
(f = 1 MHz) • Provide mini mold packages: CMPAK-4 (SOT-343mod) Outline RENESAS Package code: PLSP0004ZA-A (Package name: MPAK-4) 2 3 1 4 1.
Source 2.
Gate1 3.
Gate2 4.
Drain Notes: 1.
Marking is “FS-“.
2.
BB506M is individual type number of RENESAS BBFET.
Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source vol...

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