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H7N1005LD

Renesas Technology
Part Number H7N1005LD
Manufacturer Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Published Nov 20, 2008
Detailed Description H7N1005LD, H7N1005LS, H7N1005LM Silicon N Channel MOS FET High Speed Power Switching REJ03G0391-0200 Rev.2.00 Oct 16, 20...
Datasheet PDF File H7N1005LD PDF File

H7N1005LD
H7N1005LD

Overview
H7N1005LD, H7N1005LS, H7N1005LM Silicon N Channel MOS FET High Speed Power Switching REJ03G0391-0200 Rev.
2.
00 Oct 16, 2006 Features • Low on-resistance RDS (on) = 85 mΩ typ.
www.
DataSheet4U.
com • Low drive current • Capable of 4.
5 V gate drive Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1.
Gate 2.
Drain 3.
Source 4.
Drain 2 3 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1 1 2 3 H7N1005LD H7N1005LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 G D 1 2 3 S H7N1005LM Rev.
2.
00 Oct 16, 2006 page 1 of 8 H7N1005LD, H7N1005LS, H7N1005LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature www.
DataSheet4U.
com Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50 Ω Sym...


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