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H7N1005DL

Renesas
Part Number H7N1005DL
Manufacturer Renesas
Description Silicon N-Channel MOS FET
Published May 6, 2016
Detailed Description H7N1005DL, H7N1005DS Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 85 mΩ ...
Datasheet PDF File H7N1005DL PDF File

H7N1005DL
H7N1005DL

Overview
H7N1005DL, H7N1005DS Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 85 mΩ typ.
• Low drive current • Capable of 4.
5 V gate drive Outline REJ03G1736-0100 Rev.
1.
00 Sep 19, 2008 RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 123 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) D 4 123 G S 1.
Gate 2.
Drain 3.
Source 4.
Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tch = 25°C, Rg ≥ 50 Ω 3.
Value at Tc = 25°C Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IAP Note 2 EAR Note 2 Pch Note 3 Tch Tstg Value 100 ±20 12 30 12 8 6.
4 20 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °C REJ03G1736-0100 Rev.
1.
00 Sep 19, 2008 Page 1 of 8 H7N1005DL, H7N1005DS E...


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