DatasheetsPDF.com

FY8AAJ-03F

Renesas Technology
Part Number FY8AAJ-03F
Manufacturer Renesas Technology
Description High-Speed Switching Use Nch Power MOS FET
Published Nov 20, 2008
Detailed Description FY8AAJ-03F High-Speed Switching Use Nch Power MOS FET REJ03G0280-0100 Rev.1.00 Aug.20.2004 Features • Drive voltage : 4...
Datasheet PDF File FY8AAJ-03F PDF File

FY8AAJ-03F
FY8AAJ-03F



Overview
FY8AAJ-03F High-Speed Switching Use Nch Power MOS FET REJ03G0280-0100 Rev.
1.
00 Aug.
20.
2004 Features • Drive voltage : 4 V • VDSS : 30 V www.
DataSheet4U.
com • rDS(ON) (max) : 28 mΩ • ID : 8 A Outline SOP-8 5,6,7,8 5 8 4 1 4 1,2,3.
Source 4.
Gate 5,6,7,8.
Drain 1,2,3 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — Ratings 30 ±20 8 56 8 1.
5 6.
0 1.
7 – 55 to +150 – 55 to +150 0.
07 Unit V V A A A A A W °C °C g Conditions VGS = 0 V VDS = 0 V L = 10 µH Typical value Rev.
1.
00, Aug.
20.
2004, page 1 of 6 FY8AAJ-03F Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Drain-source leakage current Gate-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance www.
DataSheet4U.
com Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(th) rDS(ON) rDS(ON) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Rth(ch-a) trr Min.
30 ±20 — — 1.
0 — — — — — — — — — — — — — — — — — — Typ.
— — — — 1.
5 22 31 35 0.
176 13 600 200 90 10 15 40 6.
5 13.
8 1.
6 3.
5 0.
75 — 40 Max.
— — 0.
1 ±10 2.
0 28 43 50 0.
224 — — — — — — — — — — — 1.
10 73.
5 — Unit V V mA µA V mΩ mΩ mΩ V S pF pF pF ns ns ns ns nC nC nC V °C/W ns Test conditions ID = 1 mA, VGS = 0 V IG = ±100 µA, VDS = 0 V VDS = 30 V, VGS = 0 V VGS = ±20 V, VD...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)