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FY8AAJ-03A

Mitsubishi Electric Semiconductor
Part Number FY8AAJ-03A
Manufacturer Mitsubishi Electric Semiconductor
Description HIGH-SPEED SWITCHING USE
Published Mar 23, 2005
Detailed Description MITSUBISHI Nch POWER MOSFET FY8AAJ-03A HIGH-SPEED SWITCHING USE FY8AAJ-03A OUTLINE DRAWING “  Dimensions in mm 6.0...
Datasheet PDF File FY8AAJ-03A PDF File

FY8AAJ-03A
FY8AAJ-03A

Overview
MITSUBISHI Nch POWER MOSFET FY8AAJ-03A HIGH-SPEED SWITCHING USE FY8AAJ-03A OUTLINE DRAWING “  Dimensions in mm 6.
0 4.
4 Π5.
0  1.
8 MAX.
0.
4 1.
27 ‘’“  Ž SOURCE  GATE  ‘ ’ “ DRAIN Œ No-contact Ž  q 4V DRIVE q VDSS .
.
30V q rDS (ON) (MAX) .
23mΩ q ID .
8A SOP-8 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 30 ±20 8 56 8 2 8 1.
8 –55 ~ +150 –55 ~ +150 0.
07 Unit V V A A A A A W °C °C g Sep.
1998 L = 10µH MITSUBISHI Nch POWER MOSFET FY8AAJ-03A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter Drain-source breakdown voltage (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 8A, VGS = 10V ID = 4A, VGS = 4V ID = 8A, VGS = 10V ID = 8A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min.
30 — — 1.
0 — — — — — — — — — — — — — — Typ.
— — — 1.
5 17 26 144 13 1000 350 160 15 25 80 55 0.
75 — 35 Max.
— ±0.
1 0.
1 2.
0 23 40 184 — — — — — — — — 1.
10 69.
4 — Unit V µA mA V mΩ mΩ mV S pF pF pF ns ns ns ns V °C/W ns Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output c...


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