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H5N5012P

Renesas Technology
Part Number H5N5012P
Manufacturer Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Published Nov 20, 2008
Detailed Description H5N5012P Silicon N Channel MOS FET High Speed Power Switching REJ03G0378-0200Z Rev.2.00 Jun.17.2004 Features • Low on-r...
Datasheet PDF File H5N5012P PDF File

H5N5012P
H5N5012P

Overview
H5N5012P Silicon N Channel MOS FET High Speed Power Switching REJ03G0378-0200Z Rev.
2.
00 Jun.
17.
2004 Features • Low on-resistance • Low leakage current www.
DataSheet4U.
com • High speed switching • Built-in fast recovery diode Outline TO-3P D G 1.
Gate 2.
Drain (Flange) 3.
Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) IDR IAPNote3...


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