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LH532000B

Sharp Electrionic Components
Part Number LH532000B
Manufacturer Sharp Electrionic Components
Description CMOS 2M (256K x 8/128K x 16) MROM
Published Mar 22, 2005
Detailed Description LH532000B FEATURES • 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode) • BY...
Datasheet PDF File LH532000B PDF File

LH532000B
LH532000B


Overview
LH532000B FEATURES • 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access times: 120/150 ns (MAX.
) • Low-power consumption: Operating: 275 mW (MAX.
) Standby: 550 µW (MAX.
) • Programmable OE/OE and OE1/OE1/DC • Static operation • TTL compatible I/O • Three-state outputs • Single +5 V power supply • Packages: 40-pin, 600-mil DIP 40-pin, 525-mil SOP 48-pin, 12 × 18 mm2 TSOP (Type I) • ×16 word-wide pinout DESCRIPTION The LH532000B is a 2M-bit mask-programmable ROM with two programmable memory organizations, byte and word modes.
It is fabricated using silicon-gate CMOS process technology.
CMOS 2M (256K × 8/128K × 16) MROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW OE1/OE1/DC A7 A6 A5 A4 A3 A2 A1 A0 CE GND OE/OE D0 D8 D1 D9 D2 D10 D3 D11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 48 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE GND D15/A-1 (LSB) D7 D14 D6 D13 D5 D12 D4 VCC 532000B-1 Figure 1.
Pin Connections for DIP and SOP Packages 1 LH532000B CMOS 2M MROM 48-PIN TSOP (Type I) BYTE A16 A15 A14 A13 A12 A11 A10 A9 A8 NC GND NC NC OE1/OE1/DC A7 A6 A5 A4 A3 A2 A1 A0 CE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 TOP VIEW 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 GND GND D15/A-1 D7 D14 D6 D13 D5 D12 D4 VCC VCC GND D11 D3 D10 D2 D9 D1 D8 D0 OE/OE GND GND NOTE: Reverse bend available on request.
532000B-5 Figure 2.
Pin Connections for TSOP Package 2 CMOS 2M MROM LH532000B ADDRESS DECODER ADDRESS BUFFER 35 36 37 38 39 40 2 3 5 6 7 8 DATA SELECTOR/OUTPUT BUFFER A16 A15 A14 A13 A12 A11 A10 A9 A8 A7 A6 A4 A3 A2 A1 32 33 34 MEMORY MATRIX (262,144 x 8) (131,072 x 16) 29 D15 27 D14 25 D13 23 D12 20 D11 18 D10 16 D9 14 D8 28 D7 26 D6 24 D5 22 D4 19 D3 17 D2 15 D1 13 D0 A5 4 COLUMN SELECTOR A0 9 CE 10 CE BUFFER TIMING GENERATOR SENSE AMPLIFIER OE1/OE1...



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