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2SK3669

Toshiba Semiconductor
Part Number 2SK3669
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Nov 28, 2008
Detailed Description 2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VII) 2SK3669 Switching Regulator, Audio Ampli...
Datasheet PDF File 2SK3669 PDF File

2SK3669
2SK3669

Overview
2SK3669 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VII) 2SK3669 Switching Regulator, Audio Amplifier and Motor Drive Applications • • • Low drain-source ON-resistance: RDS (ON) = 95 mΩ (typ.
) High forward transfer admittance: |Yfs| = 6 S (typ.
) Low leakage current: IDSS = 100 μA (max) (VDS = 100 V) Unit: mm • Enhancement mode : Vth = 3.
0 to 5.
0 V (VDS = 10 V, ID = 1 mA) www.
DataSheet4U.
com Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP IDP PD EAS IAR (Note 3) Channel temperature Storage temperature range EAR Tch Tstg Rating 100 100 ±20 10 15 28 20 280 10 2 150 −55 to 150 W mJ A mJ °C °C A Unit V V V Pulse (tw ≤ 10 ms) (Note 1) Pulse (tw ≤ 1 ms) (Note 1) JEDEC JEITA TOSHIBA ― ― 2-7J1B Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy Weight: 0.
36 g (typ.
)...


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