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SiHF9530

Vishay Siliconix
Part Number SiHF9530
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 8, 2008
Detailed Description IRF9530, SiHF9530 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Co...
Datasheet PDF File SiHF9530 PDF File

SiHF9530
SiHF9530

Overview
IRF9530, SiHF9530 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration VGS = - 10 V 38 6.
8 21 Single S FEATURES - 100 0.
30 www.
DataSheet4U.
com • • • • • • • • Dynamic dV/dt Rating Repetitive Avalanche Rated P-Channel 175 °C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS* COMPLIANT TO-220 G DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
S G D D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRF9530PbF SiHF9530-E3 IRF9530 SiHF9530 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw TC = 25 °C EAS IAR EAR PD dV/dt TJ, Tstg VGS at - 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT - 100 ± 20 - 12 - 8.
2 - 48 0.
59 400 - 12 8.
8 88 - 5.
5 - 55 to + 175 300d 10 1.
1 W/°C mJ A mJ W V/ns °C lbf · in N·m A UNIT V Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
VDD = - 25 V, starting TJ = 25 °C, L = 4.
2 mH, RG = 25 Ω, IAS = - 12 A (see fig.
12).
c.
ISD ≤ - 12 A, dI/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d.
1.
6 mm from case.
* Pb containing terminations are not...


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