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C5905

Panasonic Semiconductor
Part Number C5905
Manufacturer Panasonic Semiconductor
Description 2SC5905
Published Dec 18, 2008
Detailed Description Power Transistors 2SC5905 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit...
Datasheet PDF File C5905 PDF File

C5905
C5905

Overview
Power Transistors 2SC5905 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit: mm ■ Features 15.
5±0.
5 φ 3.
2±0.
1 5˚ 3.
0±0.
3 5˚ (4.
5) 26.
5±0.
5 (2.
0) (1.
2) (10.
0) (23.
4) 22.
0±0.
5 • High breakdown voltage: VCBO ≥ 1 700 V • High-speed switching: tf < 200 ns • Wide safe operation area 5˚ (4.
0) 5˚ 2.
0±0.
2 5˚ ■ Absolute Maximum Ratings TC = 25°C / Parameter Symbol Rating Unit 18.
6±0.
5 (2.
0) Solder Dip 1.
1±0.
1 0.
7±0.
1 5.
45±0.
3 Collector-base voltage (Emitter open) VCBO 1 700 V e e) Collector-emitter voltage (E-B short) VCES 1 700 V c typ Collector-emitter voltage (Base open) VCEO 600 3.
3±0.
3 5.
5±0.
3 V n d stage.
tinued Emitter-base voltage (Collector open) VEBO 7 (2.
0) V le on Base current IB 8 A a elifecyc disc Collector current n u ct ped, Peak collector current * IC 20 A ICP 30 A rodu d ty Collector power dissipation PC 70 W te tin urP tinue Ta=25°C 3.
5 g fo con Junction temperature Tj 150 °C in n llowin d dis Storage temperature Tstg −55 to +150 °C s fo lane Note) *: Non-repetitive peak collector current 10.
9±0.
5 5˚ 12 3 1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package Internal Connection C B E Ma iscocontinueindteinncalnucdeetype, p ■ Electrical Characteristics TC = 25°C ± 3°C /Dis ma Parameter Symbol Conditions D ance type, Collector-base cutoff current (Emitter open) Maintentenance Emitter-base cutoff current (Collector open) ain Forward current transfer ratio d m Collector-emitter saturation voltage (plane Base-emitter saturation voltage ICBO IEBO hFE VCE(sat) VBE(sat) VCB = 1 000 V, IE = 0 VCB = 1 700 V, IE = 0 VEB = 7 V, IC = 0 VCE = 5 V, IC = 10 A IC = 10 A, IB = 2.
5 A IC = 10 A, IB = 2.
5 A Min Typ Max Unit 50 µA 1 mA 50 µA 5 12  3 V 1.
5 V Transition frequency fT VCE = 10 V, IC = 0.
1 A, f = 0.
5 MHz 3 MHz Storage time tstg IC = 10 A, Resistance loaded 3.
0 µs Fall time tf IB1 = 2.
5 A, IB2 = −5.
0 A 0.
2 µs Note)...


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