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C5909

Panasonic
Part Number C5909
Manufacturer Panasonic
Description 2SC5909
Published May 31, 2009
Detailed Description Power Transistors 2SC5909 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm ■ Features...
Datasheet PDF File C5909 PDF File

C5909
C5909

Overview
Power Transistors 2SC5909 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm ■ Features 15.
5±0.
5 φ 3.
2±0.
1 5˚ 3.
0±0.
3 5˚ (4.
5) 26.
5±0.
5 (2.
0) (1.
2) (10.
0) (23.
4) 22.
0±0.
5 • High breakdown voltage: VCBO ≥ 1 500 V • High-speed switching: tf < 200 ns • Wide safe operation area 5˚ (4.
0) 5˚ 2.
0±0.
2 5˚ ■ Absolute Maximum Ratings TC = 25°C 1.
1±0.
1 0.
7±0.
1 / Parameter Symbol Rating Unit 18.
6±0.
5 (2.
0) Solder Dip 5.
45±0.
3 e Collector-base voltage (Emitter open) VCBO 1 500 V pe) Collector-emitter voltage (E-B short) VCES 1 500 V nc d ge.
ed ty Collector-emitter voltage (Base open) VCEO 600 3.
3±0.
3 (2.
0) 5.
5±0.
3 V sta tinu Emitter-base voltage (Collector open) VEBO 7 V a e cycle iscon Base current IB 5 A life , d Collector current n u duct typed Peak collector current * IC 15 A ICP 25 A te tin Pro ed Collector power dissipation PC 50 W four ntinu Ta = 25°C 3 ing isco Junction temperature Tj 150 °C in n follow ed d Storage temperature Tstg −55 to +150 °C es plan Note) *: Non-repetitive peak collector current 10.
9±0.
5 5˚ 12 3 1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package Internal Connection C B E Ma iscocontinueindteinncalnucde type, ■ Electrical Characteristics TC = 25°C ± 3°C /Dis ma Parameter Symbol Conditions D ance type, Collector-base cutoff current (Emitter open) Maintentenance Emitter-base cutoff current (Collector open) ain Forward current transfer ratio d m Collector-emitter saturation voltage (plane Base-emitter saturation voltage ICBO IEBO hFE VCE(sat) VBE(sat) VCB = 1 000 V, IE = 0 VCB = 1 500 V, IE = 0 VEB = 7 V, IC = 0 VCE = 5 V, IC = 7.
5 A IC = 7.
5 A, IB = 1.
88 A IC = 7.
5 A, IB = 1.
88 A Min Typ Max Unit 50 µA 1 mA 50 µA 5 10  2.
5 V 1.
5 V Transition frequency fT VCE = 10 V, IC = 0.
1 A, f = 0.
5 MHz 3 MHz Storage time tstg IC = 7.
5 A, Resistance loaded 2.
7 µs Fall time tf IB1 = 1.
88 A, IB2 = −3.
75 A 0.
2 µs Note) Measu...


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