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IRFY130

Seme LAB
Part Number IRFY130
Manufacturer Seme LAB
Description N-CHANNEL POWER MOSFET
Published Jan 20, 2009
Detailed Description www.DataSheet4U.com IRFY130 MECHANICAL DATA Dimensions in mm (inches) 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 10.41 10.67 ...
Datasheet PDF File IRFY130 PDF File

IRFY130
IRFY130

Overview
www.
DataSheet4U.
com IRFY130 MECHANICAL DATA Dimensions in mm (inches) 4.
70 5.
00 0.
70 0.
90 3.
56 Dia.
3.
81 10.
41 10.
67 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDSS ID(cont) RDS(on) FEATURES 0.
89 1.
14 16.
38 16.
89 13.
39 13.
64 1 2 3 12.
70 19.
05 100V 11A 0.
19W 10.
41 10.
92 2.
54 BSC 2.
65 2.
75 • HERMETICALLY SEALED TO–220 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS TO–220M – Metal Package Pad 1 – Gate Pad 2 – Drain Pad 3 – Source • LIGHTWEIGHT • SCREENING OPTIONS AVAILABLE • ALL LEADS ISOLATED FROM CASE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RqJC RqJA Gate – Source Voltage Continuous Drain Current @ Tcase = 25°C Continuous Drain Current @ Tcase = 100°C Pulsed Drain Current Power Dissipation @ Tcase = 25°C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient ±20V 11A 7A 44A 45W 0.
36W/°C –55 to 150°C 2.
8°C/W max.
80°C/W max.
Semelab plc.
Telephone +44(0)1455 556565.
Fax +44(0)1455 552612.
E-mail: sales@semelab.
co.
uk Website: http://www.
semelab.
co.
uk Prelim.
4/98 www.
DataSheet4U.
com IRFY130 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter BVDSS STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage Test Conditions VGS = 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS VDS ³ 15V VGS = 0 VGS = 20V VGS = –20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.
5BVDSS ID = 11A VDS = 0.
5BVDSS VDD = 50V ID = 11A RG = 7.
5W ID = 11A ID = 7A ID = 11A ID = 250mA IDS = 7A VDS = 0.
8BVDSS TJ = 125°C ID = 1mA Min.
100 Typ.
Max.
Unit V DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) Static Drain – Source On–State Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate – Source Leakage Reverse Gate – Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Charge Tur...


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