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K7N401801M

Samsung semiconductor
Part Number K7N401801M
Manufacturer Samsung semiconductor
Description (K7N401801M / K7N403601M) 128Kx36 & 256Kx18 Pipelined NtRAM-TM
Published Jan 25, 2009
Detailed Description K7N403601M K7N401801M www.DataSheet4U.com 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pip...
Datasheet PDF File K7N401801M PDF File

K7N401801M
K7N401801M

Overview
K7N403601M K7N401801M www.
DataSheet4U.
com 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History Rev.
No.
0.
0 0.
1 History 1.
Initial document.
1.
Changed tCD,tOE from 4.
0ns to 4.
2ns at -75 2.
Changed DC condition at Icc and parameters ISB1 ; from 10mA to 30mA, ISB2 ; from 10mA to 30mA.
Add VDDQ Supply voltage( 2.
5V I/O ) Changed VOL Max value from 0.
2V to 0.
4V at 2.
5V I/O.
Final spec Release.
Remove VDDQ Supply voltage( 2.
5V I/O ) Add VDDQ Supply voltage( 2.
5V I/O ) Draft Date July.
06.
1998 Oct.
10 .
1998 Remark Preliminary Preliminary 0.
2 0.
3 1.
0 2.
0 3.
0 Dec.
10.
1998 Dec.
23.
1998 Jan.
29.
1999 Feb.
25.
1999 May.
13.
1999 Preliminary Preliminary Final Final Final The attached data sheets are prepared and approved by SAMSUNG Electronics.
SAMSUNG Electronics CO.
, LTD.
reserve the right to change the specifications.
SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device.
If ...


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