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K7N401809B

Samsung semiconductor
Part Number K7N401809B
Manufacturer Samsung semiconductor
Description (K7N401809B / K7N403609B) 128Kx36 & 256Kx18 Pipelined NtRAMTM
Published Jan 25, 2009
Detailed Description K7N403609B K7N401809B www.DataSheet4U.com 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pip...
Datasheet PDF File K7N401809B PDF File

K7N401809B
K7N401809B

Overview
K7N403609B K7N401809B www.
DataSheet4U.
com 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM Revision History Rev.
No.
0.
0 0.
1 History 1.
Initial document.
1.
Changed DC parameters Icc ; from 470mA to 400mA at -25, from 440mA to 360mA at -22, from 400mA to 330mA at -20, from 370mA to 310mA at -18, ISB ; from 180mA from 170mA from 160mA from 150mA ISB1 ; from 100mA 0.
2 1.
0 to to to to to 160mA at -25, 155mA at -22, 150mA at -20, 140mA at -18, 80mA Aug.
11.
2001 Nov.
15.
2001 Preliminary Final Draft Date May.
15.
2001 June.
12.
2001 Remark Preliminary Preliminary 1.
Add x32 org.
and industrial temperature 1.
Final spec release 2.
Changed Pin Capacitance - Cin ; from 5pF to 4pF - Cout ; from 7pF to 6pF 1.
Remove x32 organization.
2.
Remove -25/-22 speed bin 2.
0 Nov.
17.
2003 Final The attached data sheets are prepared and approved by SAMSUNG Electronics.
SAMSUNG Electronics CO.
, LTD.
reserve the right to change the specifications.
SAMSUNG El...


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