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AP9971GD

Advanced Power Electronics
Part Number AP9971GD
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Jan 31, 2009
Detailed Description www.DataSheet4U.com AP9971GD RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 D2 D1 D1 Advanced Power...
Datasheet PDF File AP9971GD PDF File

AP9971GD
AP9971GD

Overview
www.
DataSheet4U.
com AP9971GD RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 D2 D1 D1 Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Fast Switching Speed ▼ PDIP-8 Package G2 BVDSS RDS(ON) ID 60V 50mΩ 5A PDIP-8 S2 G1 S1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1 3 Rating 60 +25 5 3.
2 20 2 0.
016 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.
5 Unit ℃/W Data and specifications subject to change without notice 1 200809223 AP9971GD www.
DataSheet4U.
com Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=5A VGS=4.
5V, ID=2.
5A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=60V, VGS=0V VGS=+25V ID=5A VDS=48V VGS=10V VDS=30V ID=5A RG=3.
3Ω,VGS=10V RD=6Ω VGS=0V VDS=25V f=1.
0MHz Min.
60 1 - Typ.
0.
06 7 32.
5 4.
9 8.
8 9.
6 10 30 5.
5 1560 156 110 Max.
Units 50 60 3 1 25 +100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Leakage Current (Tj=70 C) VDS=48V ,VGS=0V Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Del...


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