DatasheetsPDF.com

HN7G01FE

Toshiba Semiconductor
Part Number HN7G01FE
Manufacturer Toshiba Semiconductor
Description Power Management Switch Applications
Published Feb 10, 2009
Detailed Description HN7G01FE TOSHIBA Multichip Discrete Device www.DataSheet4U.com HN7G01FE Unit: mm Power Management Switch Applications ...
Datasheet PDF File HN7G01FE PDF File

HN7G01FE
HN7G01FE

Overview
HN7G01FE TOSHIBA Multichip Discrete Device www.
DataSheet4U.
com HN7G01FE Unit: mm Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • • Q1 (transistor): 2SA1955 equivalent Q2 (MOSFET): SSM3K03FE equivalent Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating −15 −12 −5 −400 −50 Unit V V V mA mA 1.
2.
3.
4.
5.
6.
EMITTER BASE DRAIN SOURCE GATE COLLECTOR Q2 (MOSFET) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current Symbol VDS VGSS ID Rating 20 10 50 Unit V V mA JEDEC JEITA TOSHIBA ― ― 2-2N1F Weight: 0.
003 g (typ.
) Q1, Q2 Common Ratings (Ta = 25°C) Characteristic Power dissipation Junction temperature Storage temperature range Symbol P (Note 1) Tj Tstg Rating 100 125 −55~125 Unit mW °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Total rating Marking Type Name hFE Rank Pin Assignment (top view) 6 5 4 7A Q1 Q2 1 2 3 1 2007-11-01 HN7G01FE Q1 (Transistor) Electrical Characteristics (Ta = 25°C) www.
DataSheet4U.
com Characteristic Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol ICBO IEBO Test Condition VCB = −15 V, IE = 0 VEB = −5 V, IC = 0 Min ⎯ ⎯ 300 ⎯ ⎯ ⎯ T...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)