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HN7G01FU

Toshiba Semiconductor
Part Number HN7G01FU
Manufacturer Toshiba Semiconductor
Description Power Management Switch Application
Published Feb 10, 2009
Detailed Description HN7G01FU Preliminary www.DataSheet4U.com TOSHIBA Multi Chip Discrete Device HN7G01FU Unit: mm Power Management Switc...
Datasheet PDF File HN7G01FU PDF File

HN7G01FU
HN7G01FU

Overview
HN7G01FU Preliminary www.
DataSheet4U.
com TOSHIBA Multi Chip Discrete Device HN7G01FU Unit: mm Power Management Switch Application Driver Circuit Application Interface Circuit Application • • Q1 (transistor): 2SA1955 equivalent Q2 (MOS-FET): 2SK1830 equivalent Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating −15 −12 −5 −400 −50 Unit V V V mA mA Q2 (MOS-FET) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current Symbol VDS VGSS ID Rating 20 10 50 Unit V V mA JEDEC JEITA TOSHIBA Weight: 6.
8 mg (typ.
) ― ― ― Q1, Q2 Common Ratings (Ta = 25°C) Characteristics Power dissipation Junction temperature Storage temperature range Symbol PC (Note 1) Tj Tstg Rating 200 125 −55~150 Unit mW °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Total rating Marking Pin Assignment (top view) 1 2007-11-01 HN7G01FU Q1 (transistor) Electrical Characteristics (Ta = 25°C) www.
DataSheet4U.
com Characteristics Collector cut-off current Emitter cut-off current DC current gain Symbol ICBO IEBO hFE (Note 2) VCE (sat) (1) VCE (sat) (2) VBE (sat) Test Condition VCB = −15 V, IE = 0 VEB = −5 V, IC = 0 VCE = −2 V, IC = −10 mA IC = −10 mA, IB = −0.
5 mA IC = −200 mA, IB = −10 mA IC = −200 mA, IB = −10 mA Min ⎯ ⎯ 300 ⎯ ⎯ ⎯ Typ.
⎯ ⎯ ⎯ ...


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