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RJK0355DPA

Renesas Technology
Part Number RJK0355DPA
Manufacturer Renesas Technology
Description Silicon N Channel Power MOS FET Power Switching
Published Feb 15, 2009
Detailed Description www.DataSheet4U.com RJK0355DPA Silicon N Channel Power MOS FET Power Switching REJ03G1649-0500 Rev.5.00 Aug 05, 2008 F...
Datasheet PDF File RJK0355DPA PDF File

RJK0355DPA
RJK0355DPA

Overview
www.
DataSheet4U.
com RJK0355DPA Silicon N Channel Power MOS FET Power Switching REJ03G1649-0500 Rev.
5.
00 Aug 05, 2008 Features High speed switching Capable of 4.
5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.
2 mΩ typ.
(at VGS = 10 V) • Pb-free • • • • • Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal resistance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tch = 25°C, Rg ≥ 50 Ω 3.
Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Note3 Pch θch-c Note3 Tch Tstg Ratings 30 ±20 30 120 30 9 8.
1 25 5 150 –55 to +150 Unit V V A A A A mJ W °C/W °C ...


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