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RJK0355DSP

Renesas Technology
Part Number RJK0355DSP
Manufacturer Renesas Technology
Description Silicon N Channel Power MOS FET Power Switching
Published Feb 15, 2009
Detailed Description www.DataSheet4U.com RJK0355DSP Silicon N Channel Power MOS FET Power Switching REJ03G1650-0301 Rev.3.01 Apr 24, 2008 F...
Datasheet PDF File RJK0355DSP PDF File

RJK0355DSP
RJK0355DSP

Overview
www.
DataSheet4U.
com RJK0355DSP Silicon N Channel Power MOS FET Power Switching REJ03G1650-0301 Rev.
3.
01 Apr 24, 2008 Features Capable of 4.
5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.
5 mΩ typ.
(at VGS = 10 V) • Pb-free • • • • Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 5 76 34 5 6 7 8 D D D D 8 12 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) IDR Note1 Ratings 30 ±20 12 96 12 9 8.
1 1.
8 69.
4 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C IAP Note 2 EAR Note 2 Pch Note3 θch-a Note3 Tch Tstg Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tch = 25°C, Rg ≥ 50 Ω 3.
When using ...


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