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2SB668

SavantIC
Part Number 2SB668
Manufacturer SavantIC
Description SILICON POWER TRANSISTOR
Published Feb 16, 2009
Detailed Description SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB668 DESCRIPTION ·W...
Datasheet PDF File 2SB668 PDF File

2SB668
2SB668

Overview
SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors 2SB668 DESCRIPTION ·With TO-220C package ·High DC current gain ·DARLINGTON APPLICATIONS ·For use in power amplifier and switching applications PINNING PIN 1 2 3 Base Collector; connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -5 -3 -5 25 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2SB668 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA, IB=0 -100 V V(BR)CBO Collector-base breakdown voltage IC=-1mA, IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-2mA, IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A ,IB=-8mA -2.
0 V VBEsat Base-emitter saturation voltage IC=-2A ,IB=-8mA -2.
5 V ICBO Collector cut-off current VCB=-120V, IE=0 -100 µA ICEO Collector cut-off current VCE=-100V, IB=0 -500 µA IEBO Emitter cut-off current VEB=-5V, IC=0 -2 mA hFE DC current gain IC=-1A ; VCE=-3V 2000 2 SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB668 Fig.
2 Outline dimensions 3 ...


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