DatasheetsPDF.com

FDP2710

Fairchild Semiconductor
Part Number FDP2710
Manufacturer Fairchild Semiconductor
Description 250V N-Channel MOSFET
Published Feb 25, 2009
Detailed Description FDP2710 — N-Channel PowerTrench® MOSFET October 2013 FDP2710 N-Channel PowerTrench® MOSFET 250 V, 50 A, 42.5 mΩ Featu...
Datasheet PDF File FDP2710 PDF File

FDP2710
FDP2710

Overview
FDP2710 — N-Channel PowerTrench® MOSFET October 2013 FDP2710 N-Channel PowerTrench® MOSFET 250 V, 50 A, 42.
5 mΩ Features • RDS(on) = 36.
3 mΩ ( Typ.
)@ VGS = 10 V, ID = 25 A • Fast Switching Speed • Low Gate Charge • High Performance Trench technology for Extremely Low RDS(on) • High Power and Current Handing Capability • RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications • Consumer Appliances • Synchronous Rectification D GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDS VGS ID IDM EAS dv/dt PD TJ, TSTG TL Drain-Source Voltage Gate-Source voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt (Note 3) Power Dissipa...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)