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2SK3633

Toshiba Semiconductor
Part Number 2SK3633
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Mar 3, 2009
Detailed Description 2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS IV) www.DataSheet4U.com 2SK3633 Unit: mm Swi...
Datasheet PDF File 2SK3633 PDF File

2SK3633
2SK3633

Overview
2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS IV) www.
DataSheet4U.
com 2SK3633 Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 1.
35 Ω (typ.
) High forward transfer admittance: |Yfs| = 5.
2 S (typ.
) Low leakage current: IDSS = 100 μA (VDS = 640 V) Enhancement mode: Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC (Note 1) Drain current Pulse (t = 1 ms) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 800 800 ±30 7 21 150 420 7 15 150 −55~150 A W Unit V V V Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC mJ A mJ °C °C ⎯ SC-65 2-16C1B JEITA TOSHIBA Weight: 4.
6 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high t...


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