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AO4800BL

Alpha & Omega Semiconductors
Part Number AO4800BL
Manufacturer Alpha & Omega Semiconductors
Description Dual N-Channel MOSFET
Published Mar 15, 2009
Detailed Description www.DataSheet4U.com AO4800B, AO4800BL Dual N-Channel Enhancement Mode Field Effect Transistor General Description The A...
Datasheet PDF File AO4800BL PDF File

AO4800BL
AO4800BL

Overview
www.
DataSheet4U.
com AO4800B, AO4800BL Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4800B/L uses advanced trench technology to provide excellent R DS(ON) and low gate charge.
The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters.
Standard Product AO4800B/L is Pb-free (meets ROHS & Sony 259 specifications).
Features VDS (V) = 30V ID = 6.
9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.
5V) RDS(ON) < 50mΩ (VGS = 2.
5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested! S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 D1 D2 SOIC-8 G2 S1 S2 Absolute Maximum Ratings T A=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current AF Pulsed Drain Current Power Dissipation B Avalanche Current B Maximum 30 ±12 6.
9 5.
8 40 1.
9 1.
2 12 22 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C B ID IDM PD IAR EAR TJ, TSTG W A mJ °C Repetitive avalanche energy 0.
3mH Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-AmbientAF Maximum Junction-to-AmbientA Maximum Junction-to-LeadC Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 55 90 40 Max 62.
5 110 48 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com AO4800B/L www.
DataSheet4U.
com Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250 µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250 µA VGS=4.
5V, V DS=5V VGS=10V, I D=6.
9A TJ=125°C VGS=4.
5V, I D=6A VGS=2.
5V, I D=5A VDS=5V, ID=5A Min 30 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current 0.
002 1 5 100 µA nA V A 0.
7 40 1 20 25 23 34 1.
5 27 40 32 50 1 4.
5 mΩ mΩ mΩ S V A pF pF pF RDS(ON) Static Drain-Source On-Resistance g...


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