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AO4800

Alpha & Omega Semiconductors
Part Number AO4800
Manufacturer Alpha & Omega Semiconductors
Description 30V Dual N-Channel MOSFET
Published Feb 3, 2015
Detailed Description AO4800 30V Dual N-Channel MOSFET General Description Product Summary The AO4800 uses advanced trench technology to pr...
Datasheet PDF File AO4800 PDF File

AO4800
AO4800

Overview
AO4800 30V Dual N-Channel MOSFET General Description Product Summary The AO4800 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.
5V) RDS(ON) (at VGS = 2.
5V) 100% UIS Tested 100% Rg Tested 30V 6.
9A < 27mΩ < 32mΩ < 50mΩ Top View SOIC-8 Bottom View Top View S2 1 G2 2 S1 3 G1 4 8 D2 7 D2 6 D1 5 D1 G1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.
1mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 6.
9 5.
8 40 14 10 2 1.
3 -55 to 150 D1 G2 S1 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 48 74 32 Max 62.
5 90 40 D2 S2 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 6: Dec 2011 www.
aosmd.
com Page 1 of 6 AO4800 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.
7 1.
1 1.
5 V ID(ON) On state drain current VGS=4.
5V, VDS=5V 25 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6.
9A VGS=4.
5V, ID=6A TJ=125°C 17.
8 27 28 40 19 32 mΩ mΩ VGS=2.
5V, ID=5A 24 50 mΩ gFS Forward Transconductance VDS=5V, ID=5A 33 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.
7 1 V IS Maximum Body-Diode Continuous Current 2.
5 A ...


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