DatasheetsPDF.com

AOU405

Alpha & Omega Semiconductors
Part Number AOU405
Manufacturer Alpha & Omega Semiconductors
Description P-Channel MOSFET
Published Mar 23, 2009
Detailed Description www.DataSheet4U.com AOU405 P-Channel Enhancement Mode Field Effect Transistor General Description The AOU405 uses advan...
Datasheet PDF File AOU405 PDF File

AOU405
AOU405

Overview
www.
DataSheet4U.
com AOU405 P-Channel Enhancement Mode Field Effect Transistor General Description The AOU405 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.
With the excellent thermal resistance of the TO-251 package, this device is well suited for high current load applications.
Standard Product AOU405 is Pb-free (meets ROHS & Sony 259 specifications).
AOU405L is a Green Product ordering option.
AOU405 and AOU405L are electrically identical.
TO-251 D Top View Drain Connected to Tab G S G D S Features VDS (V) = -30V ID = -18A (VGS = -10V) RDS(ON) < 34mΩ (VGS = -10V) RDS(ON) < 60mΩ (VGS = -4.
5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.
1mH TC=25°C Power Dissipation B Power Dissipation A TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C C Maximum -30 ±20 -18 -18 -40 -18 40 60 30 2.
5 1.
6 -55 to 175 Units V V A A mJ W W °C TA=25°C G TA=100°C G ID IDM IAR EAR PD PDSM TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 16.
7 40 1.
8 Max 25 50 2.
5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AOU405 www.
DataSheet4U.
com Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-18A TJ=125°C VGS=-4.
5V, ID=-10A VDS=-5V, ID=-18A Min -30 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Forward Transconductance -0.
003 -1 -5 ±100 µ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)