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AOU412

Alpha & Omega Semiconductors
Part Number AOU412
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Mar 23, 2009
Detailed Description www.DataSheet4U.com AOU412 N-Channel Enhancement Mode Field Effect Transistor General Description The AOU412 uses advan...
Datasheet PDF File AOU412 PDF File

AOU412
AOU412

Overview
www.
DataSheet4U.
com AOU412 N-Channel Enhancement Mode Field Effect Transistor General Description The AOU412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance.
This device is ideally suited for use as a high side switch in CPU core power conversion.
Standard Product AOU412 is Pb-free (meets ROHS & Sony 259 specifications).
AOU412L is a Green Product ordering option.
AOU412 and AOU412L are electrically identical.
TO-251 D Top View Drain Connected to Tab Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7.
5mΩ (VGS = 10V) RDS(ON) < 11mΩ (VGS = 4.
5V) G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current C Avalanche Current Repetitive avalanche energy L=0.
1mH TC=25°C Power Dissipation B C Maximum 30 ±20 85 65 200 30 120 100 50 -55 to 175 Units V V A A mJ W °C TC=25°C G TC=100°C B ID IDM IAR EAR PD TJ, TSTG TC=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Steady-State Steady-State Symbol RθJA RθJL Typ 105 1 Max 125 1.
5 Units °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AOU412 www.
DataSheet4U.
com Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125°C Min 30 Typ Max Units V 0.
005 1 5 100 2.
5 7.
5 10 11 1 85 1600 µA nA V A 1.
5 85 2.
15 5.
7 8.
4 8.
7 60 0.
72 mΩ mΩ S V A pF pF pF Ω nC nC nC nC VGS=4.
5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Di...


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