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BDT82F

Part Number	BDT82F
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	May 10, 2009
Detailed Description	isc Silicon PNP Power Transistors BDT82F/84F/86F/88F DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-E...
Datasheet	BDT82F PDF File

Overview

isc Silicon PNP Power Transistors BDT82F/84F/86F/88F DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F ·Complement to Type BDT81F/83F/85F/87F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT82F -60 VCBO Collector-Base Voltage BDT84F BDT86F -80 -100 BDT88F -120 BDT82F -60 VCEO Collector-Emitter Voltage BDT84F BDT86F -80 -100 BDT88F -120 VEBO Em...

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