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APTGT200DA120D3

Advanced Power Technology
Part Number APTGT200DA120D3
Manufacturer Advanced Power Technology
Description Boost chopper Trench IGBT Power Module
Published May 26, 2009
Detailed Description APTGT200DA120D3 Boost chopper ® www.datasheet4u.com Trench IGBT Power Module 3 VCES = 1200V IC = 200A @ Tc = 80°C App...
Datasheet PDF File APTGT200DA120D3 PDF File

APTGT200DA120D3
APTGT200DA120D3

Overview
APTGT200DA120D3 Boost chopper ® www.
datasheet4u.
com Trench IGBT Power Module 3 VCES = 1200V IC = 200A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance - M6 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat Q2 6 7 1 2 3 4 5 7 6 2 1 Absolute maximum ratings Symbol VCES IC ICM VGE PD SCSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Short Circuit Safe Operating Area TC = 25°C Tj = 125°C V W 800A@900V These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
APT website – http://www.
advancedpower.
com 1-3 APTGT200DA120D3 – Rev 0 January, 2004 TC = 25°C TC = 80°C TC = 25°C Max ratings 1200 300 200 400 ±20 1040 Unit V A APTGT200DA120D3 All ratings @ Tj = 25°C unless otherwise specified Symbol Characteristic www.
datasheet4u.
com BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Electrical Characteristics Test Conditions VGE = 0V, IC = 6mA VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 200A Tj = 125°C VGE = VCE , IC = 6mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V ...


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