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APTGT200DA120G

Microsemi Corporation
Part Number APTGT200DA120G
Manufacturer Microsemi Corporation
Description Boost chopper Fast Trench Field Stop IGBT Power Module
Published May 26, 2009
Detailed Description APTGT200DA120G Boost chopper Fast Trench + Field Stop IGBT® www.datasheet4u.com Power Module VBUS VCES = 1200V IC = 200...
Datasheet PDF File APTGT200DA120G PDF File

APTGT200DA120G
APTGT200DA120G


Overview
APTGT200DA120G Boost chopper Fast Trench + Field Stop IGBT® www.
datasheet4u.
com Power Module VBUS VCES = 1200V IC = 200A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant CR1 OUT Q2 G2 E2 0/VBUS VBUS 0/VBUS OUT E2 G2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Reverse Bias Safe Operating Area 400A @ 1100V These Devices are sensitive to Electrostatic Discharge.
Proper Handing Procedures Should Be Followed.
See application note APT0502 on www.
microsemi.
com www.
microsemi.
com 1-5 APTGT200DA120G – Rev 1 July, 2006 Max ratings 1200 280 200 400 ±20 890 Unit V A V W APTGT200DA120G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic CES Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 200A Tj = 125°C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Min 1.
4 5.
0 Typ 1.
7 2.
0 5.
8 Max 350 2.
1 6.
5 500 Unit µA V V nA www.
datasheet4u.
com I Zero Gate Voltage Collector Current VCE(sat) VGE(th) IGES Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(of...


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